Ultra high-power 2.5 kV-1800 A Power Pack IGBT

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 233-236

  Takahashi, Yoshikazu ^a   Yoshikawa, Koh ^a   Koga, Takeharu ^a   Soutome, Masayuki ^a   Takano, Tetsumi ^a   Kirihata, Humiaki ^a   Seki, Yasukazu ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRIC DISCHARGES; POWER SUPPLY CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES;

POWER PACK INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR INTEGRATED CIRCUITS;

EID: 0030685447     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)