New collector design concept for 4.5 kV injection enhanced gate transistor (IEGT)

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 49-52

  Inoue, Tomoki ^a   Ninomiya, Hideaki ^a   Sugiyama, Koichi ^a   Matsusihta, Ken'ichi ^a   Ogura, Tsuneo ^a   Ohashi, Hiromichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Collector design concept; IEGT; Total switching loss; Trade off relation

Indexed keywords

COMPUTER SIMULATION; ELECTRIC LOSSES; ELECTRIC POTENTIAL; SWITCHING CIRCUITS;

INJECTION ENHANCED GATE TRANSISTORS (IEGT);

GATES (TRANSISTOR);

EID: 0036051671     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor
2. Design considerations and characteristics of rugged Punchthrough (PT) IGBTs with 4.5 kV blocking capability
3. 4.5 kV high-speed and ragged planar diode with novel carrier distribution control