3.3 kV Punchthrough IGBT with low loss and fast switching

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 229-232

  Mori, M ^a   Kobayashi, H ^a   Saiki, T ^a   Nagasu, M ^a   Sakano, J ^a   Saitou, R ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR JUNCTIONS; SWITCHING THEORY;

LIFETIME CONTROL METHOD; PUNCHTHROUGH INSULATED GATE BIPOLAR TRANSISTORS (PTIGBT);

BIPOLAR TRANSISTORS;

EID: 0030691611     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)