Examination of Punch Through IGBT (PT-IGBT) for high voltage and high current applications

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 237-240

  Mochizuki, K ^a   Ishii, K ^a   Takeda, M ^a   Hagino, H ^a   Yamada, T ^a  

^a Quality Evaluation and Chemical Analysis Department   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTOR DOPING;

LOCAL LIFETIME CONTROL METHOD; PUNCH THROUGH INSULATED GATE BIPOLAR TRANSISTORS (PT IGBT);

BIPOLAR TRANSISTORS;

EID: 0030685446     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)