Two-dimensional DC simulation methodology for InP/GaAs 0.51Sb0.49/InP heterojunction bipolar transistor

Solid-State Electronics

Volumn 49, Issue 6, 2005, Pages 956-964

  Maneux, C ^a   Belhaj, M ^a   Grandchamp, B ^a   Labat, N ^a   Touboul, A ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

GaAs0.51Sb0.49 material; HBT; Physical simulation

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POTENTIAL; ENERGY GAP; HYDRODYNAMICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

CONDUCTION BANDS; GAAS0.51SB0.49 MATERIAL; OFFSET VOLTAGE; PHYSICAL SIMULATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 18844454015     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.03.007     Document Type: Article

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