The mathematical and computer modelling of microwave semiconductor devices

Mathematical and Computer Modelling

Volumn 31, Issue 1, 2000, Pages 15-34

  Cole, E A B ^a   Snowden, C M ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

HEMT; MESFET; Quantum; Semiconductor; Upwinding

Indexed keywords

EID: 0034602697     PISSN: 08957177     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0895-7177(99)00213-7     Document Type: Article

References (21)

1. S. Ieziekiel, Equivalent circuit modelling, In Compound Semiconductor Device Modelling, (Edited by C.M. Snowden and R.E. Miles), pp. 149-169, Springer-Verlag, (1993).
2. M. Al-Mudares, Monte Carlo modelling techniques, In Semiconductor Device Modelling, (Edited by C.M. Snowden), pp. 180-206, Springer-Verlag, (1989).
3. P. Lugli, Monte Carlo models and simulations, In Compound Semiconductor Device Modelling, (Edited by C.M. Snowden and R.E. Miles), pp. 210-231, Springer-Verlag, (1993).
4. M. Reiser, A 2-dimensional numerical FET model for DC, AC and large signal analysis, IEEE Trans. Electron Devices ED-20, 35-45, (1973).
5. C.M. Snowden, M.J. Howes and D.V. Morgan, Large signal modelling of GaAs MESFET operation, IEEE Trans. Electron Devices ED-30, 1817-1824, (1983).
6. Y.-K. Feng and A. Hintz, Simulation of submicrometer GaAs MESFETS using a full dynamic transport model, IEEE Trans. Electron Devices ED-35, 1419-1431, (1988).
7. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, (1984).
8. E.A.B. Cole, C.M. Snowden and T. Boettcher, Solution of coupled Poisson-Schrödinger equations using multigrid methods, Int. J. Num. Modelling: Electronic Networks, Devices and Fields 10, 121-136, (1997).
9. E.A.B. Cole, Numerical methods and their application to device modelling, In Compound Semiconductor Device Modelling, (Edited by C.M. Snowden and R.E. Miles), pp. 1-25, Springer-Verlag, (1993).
10. D.L. Scharfetter and H.K. Gummel, Large signal analysis of a silicon Read diode oscillator, IEEE Trans. Electron Devices ED-16, 64-77, (1969).
11. E.A.B. Cole and C.M. Snowden, Numerical algorithms for modelling microwave semiconductor devices, Int. J. Num. Modelling: Electronic Networks, Devices and Fields 8, 13-27, (1995).
12. C.M. Snowden, Classical and semi-classical models, In Semiconductor Device Modelling, (Edited by C.M. Snowden), pp. 16-33, Springer-Verlag, (1989).
13. T.-W. Tang, IEEE Trans. Electron Devices ED31, 1912, (1984).
14. C.C. McAndrew, K. Singhal and E.L. Heasell, IEEE Electronic Device Letters EDL-6, 446, (1985).
15. C.M. Snowden and D. Loret, IEEE Trans. Electron Devices ED-34, 212, (1987).
16. J.P. Kreskovsky, A hybrid central difference scheme for solid state device simulation, IEEE Trans. Electron Devices ED-34, 1128-1133, (1987).
17. S. Adachi, J. Appl. Phys. 58, R1, (1985).
18. R. Drury and C.M. Snowden, IEEE Trans. Electron Devices 42, 1026, (1995).
19. E.A.B. Cole, T. Boettcher and C.M. Snowden, Semicond. Sci. Technol. 12, 100-110, (1997).
20. F.F. Grinstein, H. Rabitz and A. Askar, J. Comp. Phys. 51, 423, (1983).
21. A. Brandt, S. McCormick and J. Ruge, SIAM J. Sci. Stat. Comput. 4, 244, (1983).