Theoretical analysis of disorder effects on electronic and optical properties in InGaAsP quaternary alloy

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4923-4930

  Bouhafs, B ^a   Aourag, H ^a   Ferhat, M ^b   Zaoui, A ^c   Certier, M ^c  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ DES SCIENCES ET DE LA TECHNOLOGIE D ORAN MOHAMED BOUDIAF   (Algeria)

^c IUT Mesures Physiques   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL RESULTS; BOWING PARAMETERS; CHEMICAL DISORDER; COMPOSITIONAL DISORDER; DENSITY OF STATE; DISORDER EFFECT; EFFECTIVE POTENTIALS; EXPERIMENTAL DATA; FITTING PARAMETERS; INGAASP; OPTICAL STRUCTURES; QUATERNARY ALLOYS; SUBBAND ENERGIES; TIGHT BINDING; VIRTUAL CRYSTAL APPROXIMATION;

CERIUM ALLOYS; APPROXIMATION THEORY; CRYSTAL DEFECTS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ELECTROOPTICAL EFFECTS; ENERGY GAP; NUMERICAL ANALYSIS; OPTICAL PROPERTIES;

OPTICAL PROPERTIES; INDIUM ALLOYS;

DISORDER EFFECTS; QUATERNARY ALLOY;

EID: 0031268557     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366358     Document Type: Article

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