InP/GaAs0.51Sb0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: A preliminary reliability study

Microelectronics Reliability

Volumn 39, Issue 12, 1999, Pages 1833-1838

  Bolognesi, C R ^a   Matine, N ^a   Xu, X G ^a   Soerensen, G ^a   Watkins, S P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346275776     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00192-4     Document Type: Article

References (11)

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4. Matine N, Dvorak MW, Bolognesi CR, Xu X, Hu J, Watkins SP, Thewalt MLW. Nearly ideal InP/GaAsSb/ InP double heterojunction bipolar transistors with ballistically launched collector electrons. Electronics Lett 1998;34:1700-2.
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6. 0.5 on InP. Appl Phys Lett 1989;50:1364-7.
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8. McDermott BT, Gertner ER, Pittman S, Seabury CW, Chang MF. Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors. Appl Phys Lett 1996;68:1386-8.
9. Teissier R, Pelouard JL, Mollot F. Direct measurement of ballistic electron distribution and relaxation length in InP-based heterojunction bipolar transistors using electroluminescence spectroscopy. Appl Phys Lett 1998;72:2730-2.
10. Kurishima K, Yamahata S, Nakajima H, Ito H, Watanabe N. Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBTs under bias and temperature. IEEE Electron Dev Lett 1998;19:303-5.
11. Chang YH, Li GP. Degradation mechanism of base current increase under forward current stress in AlGaAs/ GaAs heterojunction bipolar transistors. Appl Phys Lett 1995;66:2721-3.