Extrinsic leakage current on InP/InGaAs DHBTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 12-15

  Martin, J C ^a   Maneux, C ^a   Labat, N ^a   Touboul, A ^a   Riet, M ^b   Blayac, S ^b   Kahn, M ^b   Godin, J ^b  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CURRENT VOLTAGE CHARACTERISTICS; ENCAPSULATION; LEAKAGE CURRENTS; OHMIC CONTACTS; POLYIMIDES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; STRESSES; SUBSTRATES; AGING OF MATERIALS; ELECTRIC CURRENT MEASUREMENT; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; TEMPERATURE; TESTING;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR; GUMMEL CHARACTERISTICS; STRESS TEMPERATURE; TRANSMISSION LINE MODEL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

AGING MECHANISM; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM GALLIUM ARSENIDE; INP SUBSTRATES; INP/INGAAS HBT; INTRINSIC DEVICE; STRESS TEMPERATURE; TEST STRUCTURE;

EID: 0038148639     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. O. Wada, "Indium Phosphide-based Femtosecond Devices for Ultrahigh Throughput Communications and Signal-Processing Systems", Int. Conf. on InP and Related Materials, 1999, pp. 7-10.
2. M. Hafizi, "HBT IC Manufacturability and Reliability", Solid-State Electronics, Vol. 41, No 10, pp. 1591-1598, 1997.
3. S. Blayac, M. Riet, J.L. Benchimol, F. Alexandre, P. Berdaguer, M. Kahn, A. Pinquier, E. Dutisseuil, J. Moulu, A. Kasbari, A. Konczykowska, and J. Godin "MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits", IPRM 2002, pp. 51-54, 2002.
4. C. Maneux et al., "Experimental procedure for the evaluation of GaAs-based HBT's reliability", Microelec. Journal, p. 357-371, 2001.
5. G.K. Reeves et al., "Obtaining the specific contact resistance from transmission line model measurements", EDL, Vol. 3, No 5, 1982.
6. C. Maneux, et al. "Experimental Evidence of Impact Ionisation in InP HBT's Designed for Rapid Digital Applications Implementation in a DC Model", Proc. of ESSDERC 2001, Nuremberg, Germany, pp. 323-326, 2001
7. Hong Wang et al. "Current Transient in Polyimide-Passivated in InP/InGaAs Heterojunction Bipolar Transistor", IEEE Transactions on Electron Devices, Vol. 47, No. 12, December 2000.