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Surface Science

Volumn 583, Issue 1, 2005, Pages 80-87

Band bending at the Si(1 0 0)-Si3N4 interface studied by photoreflectance spectroscopy

(2) Dev, Kapil a Seebauer, E G a

a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

Band bending; Defects; Interface; Photoreflectance spectroscopy; Silicon; Silicon nitride

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; DEFECTS; ION IMPLANTATION; SILICON; SILICON NITRIDE; SPECTROSCOPIC ANALYSIS;

ACTIVATION BARRIERS; BAND BENDING; DEFECT FORMATION; PHOTOREFLECTANCE SPECTROSCOPY;

INTERFACES (MATERIALS);

EID: 18444418291 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2005.03.026 Document Type: Article

Times cited : (5)

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