Annealing of radiation defects in helium-implanted Si-SiO2 structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 129, Issue 4, 1997, Pages 551-553

  Kaschieva, S ^a   Danesh, P ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HELIUM; INTERFACES (MATERIALS); ION IMPLANTATION; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; ULTRAVIOLET RADIATION;

THERMALLY STIMULATED CHARGE RELEASE (TSCR) METHOD;

MOS DEVICES;

EID: 0031235277     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00318-2     Document Type: Article

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