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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2614-2618

Interface electronic properties between silicon and silicon nitride deposited by direct photochemical vapor deposition

(3) Matsuura, Hideharu a,b Yoshimoto, Masahiro a Matsunami, Hiroyuki a

a KYOTO UNIVERSITY (Japan)

b OSAKA ELECTRO COMMUNICATION UNIVERSITY (Japan)

Author keywords

Flatband voltage shift; Hysteresis; Interface traps; MIS; Photo CVD; Silicon nitride

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DECOMPOSITION; ELECTRIC PROPERTIES; ELECTRON TUNNELING; HYSTERESIS; INTERFACES (MATERIALS); SEMICONDUCTING FILMS; SEMICONDUCTOR DIODES; SILICON NITRIDE; SILICON WAFERS;

BARRIER HEIGHT; CAPACITANCE VOLTAGE CHARACTERISTICS; FLATBAND VOLTAGE SHIFT; INTERFACE ELECTRONIC PROPERTIES; INTERFACE TRAPS; PHOTOCHEMICAL VAPOR DEPOSITION; PHOTODECOMPOSITION;

ELECTRONIC PROPERTIES;

EID: 0030145812 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.2614 Document Type: Article

Times cited : (4)

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