Physical and Electrical Characteristics of Methylsilane- and Trimethylsilane-Doped Low Dielectric Constant Chemical Vapor Deposited Oxides

Journal of the Electrochemical Society

Volumn 148, Issue 6, 2001, Pages

  Wu, Zhen Cheng ^a   Shiung, Zhi Wen ^a   Chiang, Chiu Chih ^a   Wu, Wei Hao ^a   Chen, Mao Chieh ^a   Jeng, Shwang Ming ^b   Chang, Weng ^b   Chou, Pei Fen ^b   Jang, Syun Ming ^b   Yu, Chen Hua ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18044401558     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1369373     Document Type: Article

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