Ultralow copper drift in inductively coupled plasma silicon carbide dielectrics

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1914-1916

  Shieh, Jia Min ^a   Tsai, Kou Chiang ^a   Dai, Bau Tong ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); COPPER; DIELECTRIC PROPERTIES; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; PH EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; STRENGTH OF MATERIALS; STRESS ANALYSIS; THERMAL EFFECTS;

HIGH DENSITY PLASMA CHEMICAL VAPOR DESPOSITION (HPCVD);

AMORPHOUS FILMS;

EID: 0037464210     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563052     Document Type: Article

References (15)

1. P. Xu, K. Huang, A. Patel, S. Rathi, B. Tang, J. Ferguson, J. Huang, C. Ngai, and M. Loboda, Proceedings of the 1999 International Interconnect Technology Conference (IEEE Electron Devices Society, San Francisco, CA), p. 109.
2. M. J. Loboda, Microelectron. Eng. 50, 15 (2000).
3. S. G. Lee, Y. J. Kim, S. P. Lee, H. S. Oh, S. J. Lee, M. Kim, I. G. Kim, J. H. Kim, H. J. Shin, J. G. Hong, H. D. Lee, and H. K. Kang, Jpn. J. Appl. Phys., Part 1 40, 2663 (2001).
4. B.-Y. Tsui, K.-L. Fang, and S.-D. Lee, IEEE Trans. Electron Devices 48, 2375 (2001).
5. S. V. Nguyen, IBM J. Res. Dev. 43, 109 (1999).
6. C.-H. Tseng, T.-K. Chang, F.-T. Chu, J.-M. Shieh, B.-T. Dai, H.-C. Cheng, and A. Chin, IEEE Electron Device Lett. 23, 333 (2002).
7. J. Vota, M. Janani, L. E. Camilletti, A. Kar-Roy, Q. Z. Liu, C. Nguyen, and M. D. Woo, Proceedings of the 2000 International Interconnect Technology Conference (IEEE Electron Devices Society, San Francisco, CA), p. 76.
8. D. J. Dimaria, E. Cartier, and D. Arnold, J. Appl. Phys. 73, 3367 (1993).
9. J.-M. Shieh, K.-C. Tsai, and B.-T. Dai, Appl. Phys. Lett. 81, 1294 (2002).
10. W. Qin, Z. Q. Mo, L. J. Tang, B. Yu, S. R. Wang, and J. Xie, J. Vac. Sci. Technol. B 19, 1942 (2001).
11. C. C. Chiang, M. C. Chen, Z. C. Wu, L. J. Li, S. M. Jang, C. H. Yu, and M. S. Liang, Proceedings of the 2002 International Interconnect Technology Conference (IEEE Electron Devices Society, San Francisco, CA), p. 200.
12. A. L. S. Loke, J. T. Wetzel, P. H. Townsend, T. Tanabe, R. N. Vrtis, M. P. Zussman, D. Kumar, C. Ryu, and S. S. Wong, IEEE Trans. Electron Devices 46, 2178 (1999).
13. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
14. P.-T. Liu, T.-C. Chang, Y.-L. Yang, Y.-F. Cheng, and S. M. Sze, IEEE Trans. Electron Devices 47, 1733 (2000).
15. A. L. S. Loke, C. Ryu, C. Patrick Yue, James S. H. Cho, and S. S. Wong, IEEE Electron Device Lett. 17, 549 (1996).