Inorganic Si-O-C antireflection coating at 193 nm for Cu dual damascene process

Journal of the Electrochemical Society

Volumn 150, Issue 1, 2003, Pages

  Lee, Sang Yun ^a   Kim, Yong Bae ^a,b   Byun, Jeong Soo ^a,c  

^a Stanford University   (United States)

^b AGERE SYSTEMS   (United States)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILANES; SILICON CARBIDE; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

DUAL DAMASCENE PROCESS; EXTINCTION COEFFICIENT; OXYGEN FLOW RATE; OXYGEN PLASMA TREATMENT; SILICON OXYCARBIDE FILMS; TRIMETHYLSILANE;

ANTIREFLECTION COATINGS;

EID: 0037255350     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1528944     Document Type: Article

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