Large Enhancement of Tunneling Magnetoresistance Ratio in Magnetic Tunnel Junction Connected in Series with Tunnel Diode

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 1 A/B, 2004, Pages

  Uemura, Tetsuya ^a   Honma, Satoshi ^a   Marukame, Takao ^a   Yamamoto, Masafumi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Magnetic tunnel junction; MRAM; Negative differential resistance; Tunnel diode; Tunneling magnetoresistance

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; RANDOM ACCESS STORAGE; TUNNEL DIODES;

MAGNETIC TUNNEL JUNCTIONS; MRAM; NEGATIVE DIFFERENTIAL RESISTANCE; TUNNELING MAGNETORESISTANCE;

TUNNEL JUNCTIONS;

EID: 1842759689     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L44     Document Type: Article

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