Diode-free magnetic random access memory using spin-dependent tunneling effect

Applied Physics Letters

Volumn 77, Issue 13, 2000, Pages 2036-2038

  Wang, Frank Z ^a  

^a LONDON METROPOLITAN UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000490786     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1313345     Document Type: Article

References (8)

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4. S. S. Parkin et al., J. Appl. Phys. 85, 5828 (1999).
5. L. He and F. Z. Wang, IEEE Trans. Magn. 35, 3508 (1999).
6. F. Hughes, Op Amp Handbook (PTR Prentice-Hall, London, 1993).
7. F. Z. Wang, U.S. and G.B. Patent Pending (15 September 1999).
8. F. Z. Wang, Magnetic Random Access Memories, Encyclopedia of Material Science and Technology (Elsewise, Netherlands, 2000).