Recent developments in magnetic tunnel junction MRAM

IEEE Transactions on Magnetics

Volumn 36, Issue 5 I, 2000, Pages 2752-2757

  Tehrani, S ^a   Engel, B ^a   Slaughter, J M ^a   Chen, E ^a   DeHerrera, M ^a   Durlam, M ^a   Naji, P ^a   Whig, R ^a   Janesky, J ^a   Calder, J ^a  

^a MOTOROLA INC   (United States)

Author keywords

Magnetic tunnel junction (MTJ); Magnetoresistive random access memory (MRAM); Micromagnetic switching; MRAM integration

Indexed keywords

ASPECT RATIO; CMOS INTEGRATED CIRCUITS; MAGNETIC ANISOTROPY; MAGNETORESISTANCE; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTIONS (MTJ); MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM);

RANDOM ACCESS STORAGE;

EID: 0034260889     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.908581     Document Type: Article

References (14)

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