Influence of Structural Defects on the Polishing of Silicon Carbide Single Crystal Wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 1, 2004, Pages 43-49

  Bondokov, Robert T ^a   Lashkov, Tsanko ^a   Sudarshan, Tangali S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

CMP; Defect; Etching; Micropipe; Polishing; Roughness; Silicon carbide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; ETCHING; HARDNESS; PARAMETER ESTIMATION; SILICON WAFERS; SINGLE CRYSTALS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

DEFECT; MICROPIPE;

SILICON CARBIDE;

EID: 1842710160     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.43     Document Type: Article

References (32)

1. Yu. M. Tairov and V. F. Tsvetkov: J. Cryst. Growth 43 (1978) 209.
2. D. Hoffmann, M. Bickermann, R. Eckstein, M. Kolbl, St. G. Muller, E. Schmitt, A. Weber and A. Winnacker: J. Cryst. Growth 198/199 (1999) 1005.
3. St. G. Muller, R. C. Glass, H. M. Hobgood, V. F. Tsvetkov, M. Brady, D. Henshall, J. R. Jenny, D. Malta and C. H. Carter, Jr.: J. Cryst. Growth 211(2000) 325.
4. R. C. Glass, D. Henshall, V. F. Tsvetkov and C. H. Carter, Jr.: Mater. Res. Bull (1997) 30.
5. T. Kimoto, A. Itoh, H. Matsunami and T. Okano: J. Appl. Phys. 81 (1997) 3494.
6. J. A. Powel, D. J. Larkin, L. Zhou, P. Pirouz: Trans. 3rd Int. High Temperature Electronics Conference (IEEE Pub., 1996) Vol. 1, p. 113.
7. J. A. Powel and D. J. Larkin: Phys. Status Solidi B 202 (1997) 529.
8. L. Zhou, V. Audurier, P. Pirouz and J. A. Powell: J. Electrochem. Soc. 144 (1997) L161.
9. P. Vicente, E. Pernot, D. Chaussende and J. Carnassei: Mater. Sci. Forum 389-393 (2002) 729.
10. W. J. Everson, D. W. Snyder and V. D. Heydemann: Mater. Sci. Forum 338-342 (2000) 837.
11. W. C. Mitchel, J. Brown, D. Buckanan, R. Bertke, K. Malalingham, Fred D. Orazio, Jr., P. Pirouz, H.-J. R. Tseng, U. B. Ramabadran and B. Roughani: Mater. Sci. Forum 338-342 (2000) 341.
12. X. Ma, M. Parker and T. S. Sudarshan: Appl. Phys. Lett. 80 (2002) 3298.
13. J. Heindl, H. P. Strunk, V. D. Heydemann and G. Pensl: Phys. Status Solidi A 162 (1997) 251.
14. P. Neudeck and J. A. Powell: IEEE Electron Device Lett. 15 (1994) 63.
15. S. V. Rendakova, I. P. Nikitina, A. Tregubova and V. Dmitriev: J. Electron. Mater. 27 (1998) 292.
16. J. W. Palmour, L. A. Lipkin, R. Singh, D. B. Salter, Jr., A. V. Suvorov and C. H. Carter, Jr.: Diamond Relat. Mater. 6 (1997) 1400.
17. W. J. Everson, D. W. Snyder and V. D. Heydemann: Mater. Sci. Forum 338-342 (2000) 837.
18. R. T. Bondokov, I. I. Khlebnikov, T. Lashkov, E. Tupitsyn, G. Stratiy, Y. Khlebnikov and T. S. Sudarshan: Jpn. J. Appl. Phys. 41 (2002) 7312.
19. T. Kato, H. Ohsato, A. Okamoto, N. Sugiyama and T. Okuda: Mater. Sci. Eng. B 57 (1999) 147.
20. M. Katsuno, N. Ohtani, J. Takahashi, T. Fujimoto, H. Yashiro and M. Kanaya: Jpn. J. Appl. Phys. 38 (1999) 4661.
21. F. P. Bowden and D. Tabor: The Friction and Lubrication of Solids (Oxford at the Clarendon Press, London, 1954) Part I, p. 56.
22. F. P. Bowden and D. Tabor: The Friction and Lubrication of Solids (Oxford at the Clarendon Press, London, 1964) Part II, p. 363.
23. N. Sugiyama, A. Okamoto, K. Okumura, T. Tani and N. Kamiya: J. Cryst. Growth 191 (1998) 84.
24. J. Takahashi, N. Ohtani and M. Kanaya: J. Cryst. Growth 167 (1996) 596.
25. J. Takahashi, N. Ohtani, M. Katsuno and S. Shinoyama: J. Cryst. Growth 181 (1997) 229.
26. P. G. Muzykov, Y. I. Khlebnikov, I. I. Khlebnikov, R. T. Bondokov, A. E. Grekov, S. I. Maximenko, S. I. Soloviev and T. S. Sudarshan: Proc. 44th Electronic Materials Conf., University of California, Santa Barbara, CA USA, 2002, p. 44.
27. P. T. B. Shaffer: J. Am. Ceram. Soc. 47 (1964) 466.
28. 8) Standard Test Method for Knoop Indentation Hardness of Advanced Ceramics, ASTM C 1326-99, American Society for Testing and Materials, Philadelphia, 1999.
29. Y. Xie and B. Bhushan: Wear 200 (1996) 281.
30. R. A. Stein: Physica B 185 (1993) 211.
31. S. Nishino, T. Higashino, T. Tanaka and J. Saraie: J. Cryst. Growth 147 (1995) 339.
32. T. A. Khur, E. K. Sanchez, M. Skowronski, W. M. Vetter and M. Dudley: J. Appl. Phys. 89 (2001) 4625.