The photoelastic constant and internal stress around micropipe defects of 6H-SiC single crystal

Materials Science and Engineering B

Volumn 57, Issue 2, 1999, Pages 147-149

  Kato, Tomohisa ^a   Ohsato, Hitoshi ^a   Okamoto, Atsuto ^b   Sugiyama, Naohiro ^b   Okuda, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b Rd Management Section   (Japan)

Author keywords

6H SiC single crystal; Internal stress; Micropipe defects; Photoelastic constant

Indexed keywords

CRYSTAL DEFECTS; PHOTOELASTICITY; RESIDUAL STRESSES; SINGLE CRYSTALS; STRESS ANALYSIS;

LELY METHOD; MICROPIPE DEFECTS;

SILICON CARBIDE;

EID: 0009346564     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00317-1     Document Type: Article

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