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Applied Physics Letters

Volumn 80, Issue 18, 2002, Pages 3298-3300

Nondestructive defect delineation in SiC wafers based on an optical stress technique

(3) Ma, Xianyun a Parker, Mathew a Sudarshan, Tangali S a

a University of South Carolina (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; DISLOCATION WALLS; MICROPIPES; NON DESTRUCTIVE; NONUNIFORMITY; OPTICAL STRESS TECHNIQUES; POLYTYPES;

DEFECTS; GRAIN BOUNDARIES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

SILICON WAFERS;

EID: 79956016968 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1469659 Document Type: Article

Times cited : (36)

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