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Journal of Materials Research

Volumn 15, Issue 9, 2000, Pages 2043-2053

Compositional variation of microstructure in ion-implanted AlxGa1-xAs

(6) Lagow, B W a Robertson, I M a Rehn, L E b Baldo, P M b Coleman, J J a Yeoh, T S a

a United States of America (United States)

b ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; ION IMPLANTATION; MICROSTRUCTURE; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY;

DYNAMIC ANNEALING; RUTHERFORD BACKSCATTERING CHANNELING;

ALUMINUM ALLOYS;

EID: 0034285324 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2000.0293 Document Type: Article

Times cited : (3)

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