Deformation behavior of ion-beam-modified GaN

Applied Physics Letters

Volumn 78, Issue 2, 2001, Pages 156-158

  Kucheyev, S O ^a   Bradby, J E ^a   Williams, J S ^a   Jagadish, C ^a   Swain, M V ^b   Li, G ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

^c The Health Bureau of Kaohsiung County Government   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000224157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1335552     Document Type: Article

References (17)

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17. Slightly nonconstant behavior tor E of ion-damaged GaN with increasing penetration depth [see Fig. 3(b)] may be attributed to a nonuniform distribution of implantation disorder and/or to the substrate effect.