Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability

IEEE Electron Device Letters

Volumn 18, Issue 3, 1997, Pages 81-83

  Kizilyalli, I C ^a   Lyding, J W ^b   Hess, K ^b  

^a NOKIA RESEARCH CENTER   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DEUTERIUM; DIELECTRIC FILMS; HOT CARRIERS; HYDROGEN; INTERFACES (MATERIALS); OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE;

KINETIC ISOTOPE EFFECT; LINEAR TRANSCONDUCTANCE; PLASMA DEPOSITED DIELECTRIC FILMS; STATIC CHEMICAL BONDING; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0031104189     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.556087     Document Type: Article

References (16)

1. J. M. Pimbley, M. Ghezzo, H. G. Parks, and D. M. Brown, Advanced CMOS Process Technology, VLSI Electronics Microstructure Science. San Diego, CA: Academic, 1989, vol. 19.
2. R. C. Sun, J. T. Clemens, and J. T. Nelson, "Effects of silicon nitride encapsulation on MOS device stability," in Proc. IEEE Int. Reliab. Phys. Symp., 1980, pp. 244-251.
3. 2 interface by atomic hydrogen," Appl. Phys. Lett., vol. 63, pp. 1510-1512, 1994.
4. A. B. Fowler, U.S. Patent 3 849 204, 1974.
5. J. W. Lyding, K. Hess, and I. C. Kizilyalli, "Reduction of hot electron degradation in MOS transistors by deuterium processing," Appl. Phys. Lett., vol. 68, pp. 2526-2528, 1996.
6. J. W. Lyding, T.-C. Shen, J. S. Hubacek, J. R. Tucker, and G. C. Abeln, "Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope," Appl. Phys. Lett., vol. 64, pp. 2010-2012, 1995.
7. Ph. Avouris and J. W. Lyding, private communication.
8. G. C. Abeln, T.-C. Shen, Ph. Avouris, and J. W. Lyding, unpublished.
9. T.-C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding, Ph. Avouris, and R. E. Walkup, "Atomic-scale desorption through electronic and vibrational excitation mechanisms," Science, vol. 268, pp. 1590-1592, 1995.
10. Ph. Avouris, R. E. Walkup, A. R. Rossi, H. C. Akpati, P. Norlander, T.-C. Shen, G. C. Abeln, and J. W. Lyding, "Breaking individual chemical bonds via STM-induced excitations," to be published.
11. I. C. Kizilyalli, M. J. Thoma, S. A. Lytle, E. P. Martin, R. Singh, S. C. Vitkavage, P. F. Bechtold, J. W. Kearney, M. Rambaud, M. Twiford, W. Cochran, L. Fenstermaker, R. Freyman, W. Sun, and A. Duncan, "High-performance 3.3- and 5-V 0.5-μm CMOS technology for ASIC's," IEEE Trans. Semiconduct. Manufact., vol. 8, pp. 440-448, 1995; also in I. C. Kizilyalli, S. Lytle, B. R. Jones, E. Martin, S. Shive, A. Brooks, M. Thoma, R. Schanzer, J. Sniegowski, D. Wroge, R. Key, J. Kearney, and K. Stiles, "A very high-performance and manufacturable 3.3-V 0.35-μm CMOS technology for ASIC's," in IEEE CICC Tech. Dig., 1996, pp. 31-34.
12. I. C. Kizilyalli, M. J. Thoma, S. A. Lytle, E. P. Martin, R. Singh, S. C. Vitkavage, P. F. Bechtold, J. W. Kearney, M. Rambaud, M. Twiford, W. Cochran, L. Fenstermaker, R. Freyman, W. Sun, and A. Duncan, "High-performance 3.3- and 5-V 0.5-μm CMOS technology for ASIC's," IEEE Trans. Semiconduct. Manufact., vol. 8, pp. 440-448, 1995; also in I. C. Kizilyalli, S. Lytle, B. R. Jones, E. Martin, S. Shive, A. Brooks, M. Thoma, R. Schanzer, J. Sniegowski, D. Wroge, R. Key, J. Kearney, and K. Stiles, "A very high-performance and manufacturable 3.3-V 0.35-μm CMOS technology for ASIC's," in IEEE CICC Tech. Dig., 1996, pp. 31-34.
13. A. C. Adams, "Dielectric and polysilicon film deposition," in VLSI Technology, S. M. Sze, Ed. New York: McGraw-Hill, 1983.
14. F. A. Stevie, private communication.
15. R. D. Ramsier and J. T. Yates, Jr., "Electron-stimulated desorption: Principles and applications," Surf. Sci. Rep., vol. 12, pp. 243-378, 1991.
16. See any one of many papers in Proc. IEEE Int. Phys. Reliab. Symp., 1979-1995.