A new technique to quantify deuterium passivation of interface traps in MOS devices

IEEE Electron Device Letters

Volumn 22, Issue 5, 2001, Pages 203-205

  Cheng, Kangguo ^a,b,c   Hess, Karl ^a,b,c   Lyding, Joseph W ^a,b,c  

^a IEEE   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

Deuterium; MOS device; Oxide silicon interlace; Reliability

Indexed keywords

INTERFACE TRAPS;

CMOS INTEGRATED CIRCUITS; DEUTERIUM; ELECTRON TRAPS; HYDROGEN; PASSIVATION; SECONDARY ION MASS SPECTROMETRY;

MOS DEVICES;

EID: 0035338683     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.919229     Document Type: Article

References (10)