Atomic-layer resolved monitoring of thermal oxidation of Si(001) by reflectance difference oscillation technique

Thin Solid Films

Volumn 455-456, Issue , 2004, Pages 759-763

  Yasuda, Tetsuji ^a   Nishizawa, Masayasu ^a   Kumagai, Naoto ^a   Yamasaki, Satoshi ^a   Oheda, Hitoshi ^b   Yamabe, Kikuo ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Etching; In situ monitoring; Oxidation; Reflectance difference oscillation; Si(001)

Indexed keywords

ELECTROMIGRATION; HEAT TREATMENT; LIGHT REFLECTION; OSCILLATIONS; OXIDATION; SEMICONDUCTOR MATERIALS; SILICON WAFERS; SPECTRUM ANALYSIS;

IN SITU MONITORING; REFLECTANCE DIFFERENCE OSCILLATION; SI(001); THERMAL OXIDATION;

SILICON;

EID: 17144450628     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.262     Document Type: Conference Paper

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