Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 557-560

  Mantese, L ^a   Bell, K A ^a   Rossow, U ^b   Aspnes, D E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Localization; Wave packet

Indexed keywords

COMPUTATIONAL METHODS; CRYSTALLINE MATERIALS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; ELLIPSOMETRY; SPECTROSCOPIC ANALYSIS;

CRITICAL POINT ENERGY SHIFTS; SPECTROSCOPIC ELLIPSOMETRY (SE);

SEMICONDUCTING SILICON;

EID: 0031999918     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00883-3     Document Type: Article

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