Optical anisotropy of oxidized Si(001) surfaces and its oscillation in the layer-by-layer oxidation process

Physical Review Letters

Volumn 87, Issue 3, 2001, Pages 374031-374034

  Yasuda, T ^a   Yamasaki, S ^a   Nishizawa, M ^b   Miyata, N ^b   Shklyaev, A ^b   Ichikawa, M ^b   Matsudo, T ^c   Ohta, T ^c  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; INTERFACES (MATERIALS); OSCILLATIONS; REFLECTOMETERS; SEMICONDUCTING SILICON; SILICA; SPECTROSCOPY;

OPTICAL ANISOTROPY; REFLECTANCE-DIFFERENCE (RD) MEASUREMENTS;

OXIDATION;

EID: 5744230279     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)