Systematic differences among nominal reference dielectric function spectra for crystalline Si as determined by spectroscopic ellipsometry

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 161-166

  Bell, K A ^a   Mantese, L ^a   Rossow, U ^a,b   Aspnes, D E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Dielectric function; Ellipsometry; Optical modeling; Silicon

Indexed keywords

CRYSTALLINE MATERIALS; ELLIPSOMETRY; MATHEMATICAL MODELS; SPECTROMETRY;

DIELECTRIC FUNCTIONS;

SEMICONDUCTING SILICON;

EID: 17444445227     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00804-3     Document Type: Article

References (22)

1. G.E. Jellison, Jr., Opt. Mater, 1 (1992) 41.
2. V. Nayar, W.Y. Leong, C. Pickering, A.J. Pidduck, R.T. Carline, D.J. Robbins, Appl. Phys. Lett. 61 (1992) 1304.
3. T. Yasuda, D.E. Aspnes, Appl. Opt. 33 (1994) 7435.
4. K.A. Bell, L. Mantese, U. Rossow, D.E. Aspnes, J. Vac. Sci. Technol. B 15 (1997) 1205.
5. D.E. Aspnes, A.A. Studna, Phys. Rev. B 27 (1983) 985.
6. V. Nayar, C. Pickering, A.J. Pidduck, R.T. Carline, W.Y. Leong, D.J. Robbins, Thin Solid Films 233 (1993) 40.
7. W.A. McGahan, J.A. Woollam, in: W.M. Bullis, D.G. Seiler, A. Diebold (Eds.), Proceedings of the International Workshop on Semiconductor Characterization: Present Status and Future Needs, AIP, Woodbury, 1995, p. 433.
8. G.S. Higashi, R.S. Becker, Y.J. Chabal, A.J. Becker, Appl. Phys. Lett. 58 (1991) 1656.
9. D.E. Aspnes, A.A. Studna, Appl. Opt. 14 (1975) 220.
10. D.E. Aspnes, A.A. Studna, Rev. Sci. Instrum. 49 (1978) 291.
11. D.E. Aspnes, Physica B 117/118 (1983) 359.
12. D.E. Aspnes, in: B.O. Seraphin (Ed.), Optical Properties of Solids: New Developments, North-Holland, Amsterdam, 1976, p. 799.
13. W.L. Mochán, R.G. Barrera, J. Phys. (Paris), Colloq. C5 Suppl. 45 (1984) 207.
14. D.E. Aspnes, A.A. Studna, Phys. Rev. Lett. 54 (1985) 1956.
15. D.E. Aspnes, J. Vac. Sci. Technol. B 3 (1985) 1498.
16. T. Yasuda, D.E. Aspnes, D.R. Lee, C.H. Bjorkman, G. Lucovsky, J. Vac. Sci. Technol. A 12 (1994) 1152.
17. T. Yasuda, L. Mantese, U. Rossow, D.E. Aspnes, Phys. Rev. Lett. 74 (1995) 3431.
18. L. Mantese, U. Rossow, D.E. Aspnes, Appl. Surf. Sci. 107 (1996) 35.
19. rd International Conference on the Physics of Semiconductors, World Scientific, Singapore, 1996, p. 831.
20. L. Mantese, K.A. Bell, U. Rossow, D.E. Aspnes, J. Vac. Sci. Technol. B 15 (1997) 1196.
21. A. Daunois, D.E. Aspnes, Phys. Rev. B 18 (1978) 1824.
22. N.V. Nguyen, D. Chandler-Horowitz, P.M. Amirtharaj, J.G. Pellegrino, Appl. Phys. Lett. 64 (1994) 2688.