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Volumn 48, Issue 6, 2001, Pages 336-341
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Effect of ammonia plasma pretreatment on the plasma enhanced chemical vapor deposited silicon nitride films
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Author keywords
Elastic backscattering; Films; Insulator charge density; Interface charge density; Plasma nitridation; Silicon nitride
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Indexed keywords
AMMONIA;
BACKSCATTERING;
DECOMPOSITION;
ELECTRIC CHARGE;
FILM PREPARATION;
GLOW DISCHARGES;
INTERFACES (MATERIALS);
NITRIDING;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING SILICON COMPOUNDS;
SILANES;
SILICON NITRIDE;
STOICHIOMETRY;
PLASMA NITRIDATION;
SEMICONDUCTING FILMS;
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EID: 0035339950
PISSN: 0167577X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0167-577X(00)00323-2 Document Type: Article |
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Times cited : (16)
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References (16)
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