Optimization of PECVD SiN:H films for silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 60, Issue 2, 2000, Pages 135-142

  Santana, Guillermo ^a   Morales Acevedo, Arturo ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTROOPTICAL EFFECTS; ENERGY GAP; FILM GROWTH; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON SOLAR CELLS; THIN FILMS;

SURFACE STATE PASSIVATION PROPERTIES;

SEMICONDUCTING FILMS;

EID: 0033897744     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(99)00078-1     Document Type: Article

References (6)

1. D.S. Ruby, W.L. Wilbanks, C.B. Fleddermann, A statistical analysis of the effect of PECVD deposition parameters on surface and bulk recombination in silicon solar cells, Record of the First World Conference on Photovoltaic Energy Conversion, Waikoloa, Hawaii, 1994, pp. 1335.
2. A.R. Reinberg, The Electrochemical Society Meeting, San Franciscos, CA, 1974, Extended Abstract no. 6.
3. Adams A.C. Solid State Tech. 26(4):1983;135.
4. Mar K.M., Samuelson G.M. Solid. State Tech. 23(4):1980;137.
5. Lanford W.A., Rand M.J. J. Appl. Phys. 49:1978;2473.
6. Schroder D.K. Semiconductor Material and Device Characterization. 1990;Wiley, New York.