IR and Raman absorption spectroscopic studies of APCVD, LPCVD and PECVD thin SiN films

Vacuum

Volumn 69, Issue 1-3, 2002, Pages 301-305

  Beshkov, G ^a   Lei, Shi ^b   Lazarova, V ^a   Nedev, N ^a   Georgiev, S S ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

CVD deposition; Infra red; Raman spectroscopy; Silicon nitride

Indexed keywords

ABSORPTION SPECTROSCOPY; ETCHING; INFRARED SPECTROSCOPY; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

SILICON NITRIDE FILMS;

SILICON NITRIDE;

EID: 0037168676     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00349-4     Document Type: Conference Paper

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