Electron charging and discharging in amorphous silicon quantum dots embedded in silicon nitride

Applied Physics Letters

Volumn 81, Issue 6, 2002, Pages 1092-1094

  Park, Nae Man ^a   Choi, Suk Ho ^b   Park, Seong Ju ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyung Hee University   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CHARGING PROPERTY; ELECTRON CHARGING; ELECTRON STORAGE; METAL INSULATOR SEMICONDUCTOR STRUCTURES; METAL INSULATORS; POSITIVELY CHARGED; SEMICONDUCTOR STRUCTURE; SILICON NITRIDE FILM; SILICON QUANTUM DOTS; SURFACE STATE;

CHEMICAL VAPOR DEPOSITION; DANGLING BONDS; METAL INSULATOR BOUNDARIES; MIS DEVICES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON NITRIDE;

AMORPHOUS SILICON;

EID: 79956055631     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497444     Document Type: Article

References (16)

1. Advances in Microcrystalline and Nanocrystalline Semiconductors, edited by R. W. Collins, P. M. Fauchet, I. Shimizu, J.-C. Vial, T. Shimada, and A. P. Alivisato (Materials Research Society, Pittsburgh, 1997), Vol. 452.
2. N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, Phys. Rev. Lett. 86, 1355 (2001). prl PRLTAO 0031-9007
3. N.-M. Park, T.-S. Kim, and S.-J. Park, Appl. Phys. Lett. 78, 2575 (2001). apl APPLAB 0003-6951
4. Nanomaterials: Synthesis, Properties and Applications, edited by A. S. Edelstein and R. C. Cammarata (Institute of Physics, London, 1996).
5. Y. Shi, K. Saito, H. Ishikuro, and T. Hiramoto, J. Appl. Phys. 84, 2358 (1998). jap JAPIAU 0021-8979
6. S.-H. Choi and R. G. Elliman, Appl. Phys. Lett. 74, 3987 (1999). apl APPLAB 0003-6951
7. K. Ueno and N. Koshida, Appl. Phys. Lett. 74, 93 (1999). apl APPLAB 0003-6951
8. S.-H. Choi and R. G. Elliman, Appl. Phys. Lett. 75, 968 (1999). apl APPLAB 0003-6951
9. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996). apl APPLAB 0003-6951
10. N.-M. Park, S.-H. Jeon, H.-D. Yang, H. Hwang, and S.-J. Park, Mater. Res. Soc. Symp. Proc. 638, F5.14 (2001). mrs MRSPDH 0272-9172
11. D. J. Lockwood, Z. H. Lu, and J.-M. Baribeau, Phys. Rev. Lett. 76, 539 (1996). prl PRLTAO 0031-9007
12. Physics of Semiconductor Devices, edited by S. M. Sze (Wiley, New York, 1981).
13. M. Bourcerie, J. C. Marchetaux, A. Boudou, and D. Vuilaume, Appl. Phys. Lett. 55, 2193 (1989). apl APPLAB 0003-6951
14. A. Mir and D. Vuillaume, Appl. Phys. Lett. 62, 1125 (1993). apl APPLAB 0003-6951
15. N.-M. Park, S. H. Kim, G. Y. Sung, and S.-J. Park (unpublished).
16. A. Masuda, K. Itoh, K. Matsuda, Y. Yonezawa, M. Kumeda, and T. Shimizu, J. Appl. Phys. 81, 6729 (1997). jap JAPIAU 0021-8979