PECVD formation of ultrathin silicon nitride layers for CMOS technology

Vacuum

Volumn 70, Issue 2-3, 2003, Pages 323-329

  Beck, R B ^a   Giedz, M ^a   Wojtkiewicz, A ^a   Kudla A ^b   Jakubowski, A ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

CMOS technology; Gate dielectric; PECVD; Silicon nitride

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEPOSITION; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); MOS CAPACITORS; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; ULTRATHIN FILMS;

GATE DIELECTRIC;

SILICON NITRIDE;

EID: 12244310196     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00665-6     Document Type: Conference Paper

References (2)

1. Baumvol I.J.R. Atomic transport during growth of ultra thin dielectrics on silicon. Surface science reports. 1999;Elsevier, Amsterdam.
2. Peace G.S. Taguchi methods - a hands-on approach. 1996;Addison-Wesley, Paris.