Bonding characteristics of 3C-SiC wafers with hydrofluoric acid for high-temperature MEMS applications

Sensors and Actuators, A: Physical

Volumn 119, Issue 2, 2005, Pages 599-604

  Chung, Gwiy Sang ^a   Maboudian, Roya ^b  

^a Dongseo University   (South Korea)

^b University of California   (United States)

Author keywords

3C SiC; HF; High temperature; MEMS; PECVD oxide; Wafer bonding

Indexed keywords

ATOMIC FORCE MICROSCOPY; BONDING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; HYDROFLUORIC ACID; MICROELECTROMECHANICAL DEVICES; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS; THIN FILMS;

3C-SIC; HIGH TEMPERATURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OXIDE; WAFER BONDING;

SILICON WAFERS;

EID: 17044377587     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.10.004     Document Type: Article

References (24)

1. G. Krotz, W. Wondrak, M. Eickhoff, V. Lauer, E. Obermeier, and C. Cavalloni New high-temperature sensors for innovative engine management Springer Proceedings on Advanced Microsystems for Automotive Applications Berlin 1998 223
2. B. Casady, and R.W. Johnson Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review Solid-State Electron. 39 1996 1409 1422
3. M. Mehregany, and C.A. Zorman SiC MEMS: opportunities and challenges for application in harsh environments Thin Solid Films 355/356 1999 518 524
4. P.M. Sarro Silicon carbide as a new MEMS technology Sens. Actuators A 82 2000 210 218
5. M. Mehregany, C.A. Zorman, S. Roy, A.J. Fleischman, C.H. Wu, and N. Rajan Silicon carbide for micro-electromechanical system Int. Mater. Rev. 45 2000 85 108
6. Y.T. Yang, K.L. Ekinci, X.M.H. Huang, L.M. Schiavone, and M.L. Roukes Monocrystalline silicon carbide nanoelectromechanical systems Appl. Phys. Lett. 78 2001 162 164
7. G. Kotzar, M. Freas, P. Abel, A. Fleischman, S. Roy, C. Zorman, J.M. Moran, and J. Melzak Evaluation of MEMS materials of construction for implantable medical devices Biomaterials 23 2002 2737 2750
8. M.L. Roukes Nanoelectromechanical systems Proceedings of the Solid-State Sensor & Actuator Workshop Hilton Head SC 2000 367
9. X.M.H. Huang, K.L. Ekinci, Y.T. Yung, C.A. Zorman, M. Mehregany, and M.L. Roukes Nano-electrochemical silicon carbide resonators for ultra-high frequency applications Proceedings of the Solid-State Sensor & Actuator Workshop Hilton Head SC 2003 368
10. Y. Chen, K. Matsumoto, Y. Nishino, T. Shirafuji, and S. Nishino Heteroepitaxial growth of 3C-SiC using HMDS by atmospheric CVD Mater. Sci. Eng. B 61/62 1999 579 582
11. M. Mehregany, C.A. Zorman, N. Rajan, and C.H. Wu Silicon carbide MEMS for harsh environments Proc. IEEE 86 1998 1594 1610
12. T. Toryama, and S. Sugiyama Analysis of piezoresistance in n-type β-SiC for high-temperature mechanical sensors Appl. Phys. Lett. 81 2003 2797 2799
13. G. Krotz, H. Moller, M. Eickhoff, S. Zappe, R. Ziermann, and E. Obermeier Heteroepitaxial growth of 3C-SiC on SOI for sensor applications Mater. Eng. B 61 1999 516 521
14. G.S. Chung Thin SOI structures for sensing and integrated circuit applications Sens. Actuators A 39 1993 241 251
15. W. Reichert, E. Obermeier, and J. Stoemenos β-SiC films on SOI substrates for high temperature applications Diamond Relat. Mater. 6 1997 1448 1450
16. 2 bonding with hydrofluoric acid, room temperature and low stress bonding technique for MEMS Sens. Actuators A 79 2000 237 244
17. M. Wiegand, M. Reiche, U. Gosele, K. Gutjahr, D. Stolze, R. Longwitz, and E. Hiller Wafer bonding of silicon wafer covered with various surface layers Sens. Actuators A 86 2000 91 95
18. 2 as an insulator for SiC devices Microelectron. Eng. 36 1997 167 174
19. 2 prepared by plasma-assisted oxidation and thermal oxidations Appl. Surf. Sci. 123/124 1998 435 439
20. A. Koh, A. Kestle, C. Wright, S.P. Wilks, S.P. Wilks, P.A. Mawby, and W.R. Bowen Comparative surfaces studies on wet and dry sacrificial thermal oxidation on silicon carbide Appl. Surf. Sci. 174 2001 210 216
21. K. Pohlmann, B. Bhushan, and K.H.Z. Gahr Effect of thermal oxidation on indentation and scratching of single-crystal silicon carbide on microscale Wear 237 2000 116 128
22. 2 bonding with hydrofluoric acid Sens. Actuators A 79 2000 237 240
23. A. Berthold, B. Jackoby, and M.J. Vellekoop Wafer-to-wafer fusion bonding of oxidized silicon to silicon at low temperatures Sens. Actuators A 68 1998 410 413
24. Q.Y. Tong, and U. Gosele A model of low-temperature wafer bonding and its application J. Electrochem. Soc. 143 1996 1773 1779