Studies on SiO2-SiO2 bonding with hydrofluoric acid. Room temperature and low stress bonding technique for MEMS

Sensors and Actuators, A: Physical

Volumn 79, Issue 3, 2000, Pages 237-244

  Nakanishi, H ^a   Nishimoto, T ^a   Nakamura, R ^b   Yotsumoto, A ^b   Yoshida, T ^a   Shoji, S ^b  

^a SHIMADZU CORPORATION   (Japan)

^b WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (CHEMICAL); BONDING; HYDROFLUORIC ACID; MICROANALYSIS; PRESSURE EFFECTS; RESIDUAL STRESSES; SECONDARY ION MASS SPECTROMETRY; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON PROBE MICROANALYSIS (EPMA); RADIOACTIVE ISOTOPE (RI) ANALYSIS;

MICROELECTROMECHANICAL DEVICES;

EID: 0033882527     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00246-0     Document Type: Article

References (8)

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