Analysis of piezoresistance in n-type β-SiC for high-temperature mechanical sensors

Applied Physics Letters

Volumn 81, Issue 15, 2002, Pages 2797-2799

  Toriyama, Toshiyuki ^a   Sugiyama, Susumu ^b  

^a NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION POTENTIAL; ELECTRON TRANSFER; GAUGE FACTORS; HIGH TEMPERATURE; IMPURITY CONCENTRATION; INTERVALLEY SCATTERING; MECHANICAL SENSORS; MOBILITY SHIFT; OPERATION RANGE; PIEZORESISTANCE; PIEZORESISTIVE SENSORS; TEMPERATURE RANGE;

ELECTRON TRANSITIONS; GAGES; SENSORS;

SILICON CARBIDE;

EID: 79956012552     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1513652     Document Type: Article

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