Study on exposure contrast of an EUV mask

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5130, Issue , 2003, Pages 1026-1034

  Hosoya, Morio ^a   Shoki, Tsutomu ^a   Kinoshita, Takeru ^a   Sakaya, Noriyuki ^a   Nagarekawa, Osamu ^a  

^a HOYA CORPORATION   (Japan)

Author keywords

CrX buffer layer; EUV lithography; EUV mask; Exposure contrast; Multilayer; TaBN absorber

Indexed keywords

ASPECT RATIO; CHROMIUM COMPOUNDS; COMPUTER SIMULATION; IMAGE ANALYSIS; LIGHT ABSORPTION; LIGHT INTERFERENCE; LIGHT REFLECTION; LIGHTING; OPTICAL MULTILAYERS; PHOTOLITHOGRAPHY; STRESS ANALYSIS; SUBSTRATES; TANTALUM COMPOUNDS; ULTRAVIOLET RADIATION;

EXPOSURE CONTRAST; EXTREME ULTRAVIOLET (EUV) MASKS; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);

MASKS;

EID: 1642555601     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504072     Document Type: Conference Paper

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