EUVL mask fabrication for the 45-nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 865-871

  Fisch, Emily ^a   Kindt, Louis ^a   Lercel, Michael ^a   Racette, Ken ^a   Williams, Carey ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT REFLECTION; LITHOGRAPHY; MIRRORS; MULTILAYERS; ULTRAVIOLET DEVICES;

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);

MASKS;

EID: 0036454633     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476989     Document Type: Conference Paper

References (7)

1. Ken Racette, Carey Williams, Emily Fisch, Louis Kindt, Mark Lawliss, Robin Ackel, Michael Lercel "Status of fabrication of square format masks for extreme ultraviolet lithography (EUVL) at the MCoC", SPIE Proc., Vol. 4688, (2002).
2. Semiconductor Industry Association, International Technology Roadmap for Semiconductors: 2001 Ed., Austin, TX, International Sematech, 2001.
3. "Proposal for EUVL Mask Absorber Stack and Multilayer Coating SEMI Standard (draft 3414)" Scott Hector.
4. P.Y. Yan, "The Impact of EUVL Mask Buffer and Absorber Material Properties on Mask Quality and Performance" SPIE Proc., Vol. 4688, (2002).
5. Semiconductor Industry Association, International Technology Roadmap for Semiconductors: 2001 Ed., Austin, TX, International Sematech, 2001.
6. International Semiconductor Industry Association, International Technology Roadmap for Semiconductors: 2001 Ed., Austin, TX, International Sematech, 2001.
7. Donald Pettibone et al., "Inspection of EUV Reticles", SPIE Proc., Vol. 4688, (2002).