Application of vector scan electron beam lithography to 45 nm node extreme ultraviolet lithography reticles

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 872-879

  Walker, David ^a   Mathur, D P ^a   Su, Clyde ^b   Huang, Torey ^b  

^a PHOTRONICS INC   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE ANALYSIS; MASKS; SUBSTRATES; ULTRAVIOLET DEVICES;

RETICLES;

ELECTRON BEAM LITHOGRAPHY;

EID: 0036458693     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476990     Document Type: Conference Paper

References (6)

1. The International Technology Roadmap for Semiconductors, Tables 41A and 41B (San Jose: Semiconductor Industry Association, 2001); available from Internet: http://public.itrs.net/Files/2001ITRS/Home.htm.
2. NGL MCoC Internal Publication.
3. SEMI standard Meeting, July 2002.
4. D.W. Pettibone, A. Veldman, T. Liang, A.R. Stivers, S.D. Hector, P.J. Mangat, K.L. Blaedel, D.M. Walker, "Inspection of EUV Reticles", Proc. of SPIE, 4688, 2002.
5. ASML Lithography Internal Publication.
6. L.E. Klebanoff, D.E. Dedrick, D.J. Rader, E.W. Beyer, "Verification of thermophoretic protection of EUV masks", Proc. of SPIE, 4688, 2002.