-
1
-
-
84955284202
-
-
U.S. Patent O. Heil, British Patent 439,457
-
J. E. Lilienfeld, U.S. Patent 1,745,175 (1930) and O. Heil, British Patent 439,457.
-
(1930)
-
-
Lilienfeld, J.E.1
-
2
-
-
0038040245
-
Radiation induced regeneration through the P-N junction isolation in monolithic IC's
-
October
-
K. Kinoshito, C. T. Kleiner, and E. D. Johnson, "Radiation Induced Regeneration Through the P-N Junction Isolation in Monolithic IC's," IEEE Trans, Nuclear Sci., NS-12, pp. 83-90, October 1965.
-
(1965)
IEEE Trans, Nuclear Sci.
, vol.NS-12
, pp. 83-90
-
-
Kinoshito, K.1
Kleiner, C.T.2
Johnson, E.D.3
-
4
-
-
0014617202
-
Radiation induced integrated circuit latchup
-
Dec.
-
J. F. Leavy and R. A. Poll, "Radiation Induced Integrated Circuit Latchup," IEEE Trans. Nuclear Sci., NS-16, pp. 96-103, Dec. 1969.
-
(1969)
IEEE Trans. Nuclear Sci.
, vol.NS-16
, pp. 96-103
-
-
Leavy, J.F.1
Poll, R.A.2
-
5
-
-
0014617233
-
Transient radiation response of complementary symmetry MOS integrated circuits
-
December
-
W. J. Dennehy, A. G. Holmes-Scidle, and W. F. Leipold, "Transient Radiation Response of Complementary Symmetry MOS Integrated Circuits," IEEE Trans. Nuclear Sci., NS-16, pp. 114-119, December 1969.
-
(1969)
IEEE Trans. Nuclear Sci.
, vol.NS-16
, pp. 114-119
-
-
Dennehy, W.J.1
Holmes-Scidle, A.G.2
Leipold, W.F.3
-
6
-
-
0015770573
-
Latchup in. CMOS integrated circuits
-
December
-
B. L. Gregory, and B. D. Shafer, "Latchup in. CMOS Integrated Circuits," IEEE Trans. Nuclear Sci., NS-20, pp. 293-299, December 1973.
-
(1973)
IEEE Trans. Nuclear Sci.
, vol.NS-20
, pp. 293-299
-
-
Gregory, B.L.1
Shafer, B.D.2
-
9
-
-
0037568803
-
Reliability considerations for COS/MOS devices
-
RCA Corporation, Somerville, NJ, July
-
L. J. Gallace, and H. L. Pujol, "Reliability Considerations for COS/MOS Devices," RCA Tech. Notes ST-6418, RCA Corporation, Somerville, NJ, July 1975.
-
(1975)
RCA Tech. Notes ST-6418
-
-
Gallace, L.J.1
Pujol, H.L.2
-
11
-
-
0037691091
-
Analysis of latchup prevention in CMOS IC's using epitaxial buried layer process
-
D. B. Estreich, A. Ochoa, and R.W. Dutton, "Analysis of Latchup Prevention in CMOS IC's Using Epitaxial Buried Layer Process," IEDM Tech. Dig., 1978.
-
(1978)
IEDM Tech. Dig.
-
-
Estreich, D.B.1
Ochoa, A.2
Dutton, R.W.3
-
12
-
-
0038185073
-
The physics and modelling of latchup and CMOS integrated circuits
-
November
-
D. B. Estreich, "The Physics and Modelling of Latchup and CMOS Integrated Circuits," Integrated Circuits Laboratory, November 1980.
-
(1980)
Integrated Circuits Laboratory
-
-
Estreich, D.B.1
-
13
-
-
0020909950
-
Epitaxial layer enhancement of N-well guard rings for CMOS circuits
-
Dec.
-
R. Troutman, "Epitaxial Layer Enhancement of N-Well Guard Rings for CMOS Circuits," IEEE Elec. Dev. Let., Vol EDL-4, pp. 438-440, Dec. 1983.
-
(1983)
IEEE Elec. Dev. Let.
, vol.EDL-4
, pp. 438-440
-
-
Troutman, R.1
-
14
-
-
0020704130
-
A transient analysis of latchup in bulk CMOS
-
ED-30 Feb.
-
R. R. Troutman, and H. P. Zappe, "A Transient Analysis of Latchup in Bulk CMOS," IEEE Trans. Elec. Dev., ED-30, pp. 170-179, Feb. 1983.
-
(1983)
IEEE Trans. Elec. Dev.
, pp. 170-179
-
-
Troutman, R.R.1
Zappe, H.P.2
-
16
-
-
0020879244
-
Comparison of latchup in P-and N-well CMOS circuits
-
D. Takacs, J. Harter, E. P. Jacobs, C. Werner, U. Schwabe et al., "Comparison of Latchup in P-and N-well CMOS circuits" IEDM Tech. Dig., 1983, pp. 159-164.
-
(1983)
IEDM Tech. Dig.
, pp. 159-164
-
-
Takacs, D.1
Harter, J.2
Jacobs, E.P.3
Werner, C.4
Schwabe, U.5
-
17
-
-
0021201527
-
Latchup model for parasitic path in bulk CMOS
-
ED-31 Jan.
-
R. C. Fang and J. L. Moll, "Latchup Model for Parasitic Path in Bulk CMOS," IEEE Trans. Elec. Dev., ED-31, pp. 113-120, Jan. 1984.
-
(1984)
IEEE Trans. Elec. Dev.
, pp. 113-120
-
-
Fang, R.C.1
Moll, J.L.2
-
18
-
-
0021204461
-
A better understanding of CMOS latchup
-
Jan.
-
G. Hu, "A Better Understanding of CMOS Latchup," IEEE Trans. Elec. Dev. ED-31, pp. 62-67, Jan. 1984.
-
(1984)
IEEE Trans. Elec. Dev.
, vol.ED-31
, pp. 62-67
-
-
Hu, G.1
-
19
-
-
0022757469
-
Transmission line modeling of substrate resistance and CMOS latchup
-
July
-
R. R. Troutman and M. J. Hargrove, "Transmission Line Modeling of Substrate Resistance and CMOS Latchup," IEEE Trans. Elec. Dev., July 1986.
-
(1986)
IEEE Trans. Elec. Dev.
-
-
Troutman, R.R.1
Hargrove, M.J.2
-
20
-
-
28744434587
-
Retrograde well and epitaxial thickness optimization for shallow-and deep-trench collar merged isolation and node trench SPT cell and CMOS logic technology
-
S. Voldman, M. Marceau, A. Baker, E. Adler, S. Geissler, J. Slinkman, J. Johnson, and M. Paggi, "Retrograde well and epitaxial thickness optimization for shallow-and deep-trench collar merged isolation and node Trench SPT cell and CMOS Logic Technology," IEDM Tech. Dig., 1992, pp. 811-815.
-
(1992)
IEDM Tech. Dig.
, pp. 811-815
-
-
Voldman, S.1
Marceau, M.2
Baker, A.3
Adler, E.4
Geissler, S.5
Slinkman, J.6
Johnson, J.7
Paggi, M.8
-
21
-
-
0031707249
-
Latchup in CMOS
-
Invited Talk April
-
M. Hargrove, S. Voldman, J. Brown, K. Duncan, and W. Craig, "Latchup in CMOS," Invited Talk, International Reliability Physics Symposium, April 1998, pp. 269-278.
-
(1998)
International Reliability Physics Symposium
, pp. 269-278
-
-
Hargrove, M.1
Voldman, S.2
Brown, J.3
Duncan, K.4
Craig, W.5
-
23
-
-
0033314266
-
Integration of high-Q inductors in a latchup resistant CMOS technology
-
M. R. Frei, N. R. Belk, D. C. Dennis, M. S. Carroll, W. Lin, M. R. Pinto, V. D. Archer, T. G. Ivanov, S. Moinian, K. K. Ng, and J. Chu, "Integration of high-Q inductors in a latchup resistant CMOS technology", IEDM Tech, Dig. 1999, pp. 757-760.
-
(1999)
IEDM Tech, Dig.
, pp. 757-760
-
-
Frei, M.R.1
Belk, N.R.2
Dennis, D.C.3
Carroll, M.S.4
Lin, W.5
Pinto, M.R.6
Archer, V.D.7
Ivanov, T.G.8
Moinian, S.9
Ng, K.K.10
Chu, J.11
-
24
-
-
0029405952
-
Mev implants boost device design
-
November
-
S. Voldman, "Mev Implants Boost Device Design" IEEE J. Circuits and Devices, Vol 11, No. 6 pp. 8-16, November 1995.
-
(1995)
IEEE J. Circuits and Devices
, vol.11
, Issue.6
, pp. 8-16
-
-
Voldman, S.1
-
25
-
-
0035444709
-
Evaluation of high dose, high energy boron implantation into Cz substrates for epi-replacement in CMOS technology
-
L. September
-
K. K. Bourdelle, Y. Chen, R. A. Ashton, L., M. Rubin, A. Agarwal, and W. Morris "Evaluation of high dose, high energy boron implantation into Cz substrates for epi-replacement in CMOS technology", IEEE Trans. Elec. Dev., v. 48, September 2001 pp. 2043.
-
(2001)
IEEE Trans. Elec. Dev.
, vol.48
, pp. 2043
-
-
Bourdelle, K.K.1
Chen, Y.2
Ashton, R.A.3
Rubin, M.4
Agarwal, A.5
Morris, W.6
-
26
-
-
0033335815
-
Superior latchup resistance of high dose energy implanted P+ buried layers
-
Kyoto, Japan
-
K. C. Leong, P. C. Liu, W. Morris, L. Rubin, C. H. Gan, and L. Chan, "Superior Latchup Resistance of High Dose Energy Implanted P+ Buried Layers" Proc of the XII International Conference on Ion Implantation Technology, Kyoto, Japan 1998, pp. 99.
-
(1998)
Proc of the XII International Conference on Ion Implantation Technology
, pp. 99
-
-
Leong, K.C.1
Liu, P.C.2
Morris, W.3
Rubin, L.4
Gan, C.H.5
Chan, L.6
|