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Heavily doped regions are often produced by ion implantation and a laser-melt anneal after which the arsenic is nearly fully activated. SIMS measurements indicate that the arsenic stays in the lattice during subsequent processing (which we are attempting to model) in which the deactivation takes place
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Heavily doped regions are often produced by ion implantation and a laser-melt anneal after which the arsenic is nearly fully activated. SIMS measurements indicate that the arsenic stays in the lattice during subsequent processing (which we are attempting to model) in which the deactivation takes place.
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