메뉴 건너뛰기




Volumn 72, Issue 12, 1998, Pages 1492-1494

Deactivation in heavily arsenic-doped silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000086784     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121036     Document Type: Article
Times cited : (35)

References (19)
  • 12
    • 21544471570 scopus 로고    scopus 로고
    • Heavily doped regions are often produced by ion implantation and a laser-melt anneal after which the arsenic is nearly fully activated. SIMS measurements indicate that the arsenic stays in the lattice during subsequent processing (which we are attempting to model) in which the deactivation takes place
    • Heavily doped regions are often produced by ion implantation and a laser-melt anneal after which the arsenic is nearly fully activated. SIMS measurements indicate that the arsenic stays in the lattice during subsequent processing (which we are attempting to model) in which the deactivation takes place.
  • 13
    • 0001782306 scopus 로고
    • Highlights of Condensed Matter Theory edited by F. Bassani et al. North-Holland, Amsterdam, The Netherlands
    • O. K. Andersen, O. Jepsen, and D. Glotzel, Highlights of Condensed Matter Theory, edited by F. Bassani et al. (North-Holland, Amsterdam, The Netherlands, 1985), p. 59;
    • (1985) , pp. 59
    • Andersen, O.K.1    Jepsen, O.2    Glotzel, D.3
  • 16
    • 0004184936 scopus 로고
    • edited by Springer, New York
    • Landolt-Bor̈nstein, Vol. 17a, edited by O. Madelung (Springer, New York, 1982).
    • (1982) Landolt-Bor̈nstein , vol.17 A
    • Madelung, O.1
  • 17
    • 21544480873 scopus 로고    scopus 로고
    • Ph.D. dissertation, Stanford University
    • P. Rousseau, Ph.D. dissertation, Stanford University, 1996.
    • (1996)
    • Rousseau, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.