The structure of vacancy-impurity complexes in highly n-type Si

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 463-467

  Saarinen, K ^a   Nissila J ^a   Kauppinen, H ^a   Hakala, M ^a   Puska, M J ^a   Hautojarvi P ^a   Corbel, C ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

Compensation; Diffusion; Positrons; Si

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; SEMICONDUCTOR DOPING;

ELECTRICAL DEACTIVATION; ELECTRON MOMENTUM DISTRIBUTION MEASUREMENT; POSITRON LIFETIME MEASUREMENT;

SEMICONDUCTING SILICON;

EID: 0033337838     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00523-2     Document Type: Article

References (19)

1. A. Lietoila et al., Appl. Phys. Lett. 36 (1980) 765.
2. K.C. Pandey et al., Phys. Rev. Lett. 61 (1988) 1282.
3. M. Ramamoorthy et al., Phys. Rev. Lett. 76 (1996) 4753.
4. D.J. Chadi et al., Phys. Rev. Lett. 79 (1997) 4834.
5. K. Saarinen et al., in: M. Stavola (Ed.), Identification of Defects in Semiconductors, Academic Press, New York, 1998, p. 209.
6. K. Saarinen et al., Phys. Rev. Lett. 82 (1999) 1883.
7. D.W. Lawther et al., Appl. Phys. Lett. 67 (1995) 3575.
8. U. Myler et al., Appl. Phys. Lett. 69 (1996) 3333.
9. S. Szpala, Phys. Rev. B 54 (1996) 4722.
10. M. Alatalo et al., Phys. Rev. B 51 (1995) 4176.
11. J. Mäkinen et al., Phys. Rev. B 39 (1989) 10162.
12. J. Mäkinen et al., J. Phys.: Condens. Matter 4 (1992) 5137.
13. M. Hakala et al., Phys. Rev. B 57 (1998) 7621.
14. V. Avalos et al., Phys. Rev. B 54 (1996) 1724.
15. H. Kauppinen et al., Phys. Rev. B 55 (1997) 9598.
16. G.D. Watkins, in: S. Pantelides (Ed.), Deep Centers in Semiconductors, Gordon and Breach, New York, 1986, p. 147.
17. M. Alatalo et al., Phys. Rev. B 54 (1996) 2397.
18. D. Mathiot et al., Appl. Phys. Lett. 42 (1983) 1043.
19. M.A. Berding et al., Appl. Phys. Lett. 72 (1998) 1492.