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Volumn 88, Issue 6, 2000, Pages 3254-3259

Si self-interstitial injection from Sb complex formation in Si

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Indexed keywords


EID: 0005877448     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1289234     Document Type: Article
Times cited : (18)

References (27)
  • 12
    • 0003597024 scopus 로고
    • Properties of Silicon, INSPEC, The Institute of Electrical Engineers, London
    • D. Nobili, in Properties of Silicon, EMIS Data Reviews Series, No. 4 (INSPEC, The Institute of Electrical Engineers, London, 1988), pp. 398, 401.
    • (1988) EMIS Data Reviews Series , vol.4 , pp. 398
    • Nobili, D.1
  • 26
    • 85037497123 scopus 로고    scopus 로고
    • note
    • nV complexes, n = 2.3.4 have been suggested (Ref. 8) to remove the same number of electrons, viz. 4, from the conduction band.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.