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Volumn 245, Issue 1-3, 1999, Pages 20-26

Properties of SiO2 films deposited on silicon at low temperatures by plasma enhanced decomposition of hexamethyldisilazane

(4) Pecheur A a,b Autran, J L b Lazarri, J P a Pinard, P b

a SILMAG (France)

b INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DECOMPOSITION; DEPOSITION; ELECTRIC CURRENTS; ETCHING; OXYGEN; PLASMA APPLICATIONS; PRESSURE EFFECTS; REFRACTIVE INDEX; SILICA; SILICON; STOICHIOMETRY;

HEXAMETHYLDISILAZANE;

PROTECTIVE COATINGS;

EID: 0344718086 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00868-0 Document Type: Article

Times cited : (19)

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