A new concept for using ferroelectric transistors in nonvolatile memories

Integrated Ferroelectrics

Volumn 60, Issue , 2004, Pages 45-58

  Fitsilis, Michael ^a   Kohlstedt, Hermann ^a   Waser, Rainer ^a   Ullmann, Marc ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Bosch AG   (Germany)

Author keywords

BSIM3v3; FeFET; Ferroelectric field effect transistor; MFIS; Non destructive readout; Non volatile memory

Indexed keywords

BSIM3V3; FEFET; FERROELECTRIC FIELD EFFECT TRANSISTOR; MFIS; NON-DESTRUCTIVE READOUT;

ELECTRIC POTENTIAL; NONVOLATILE STORAGE; POLARIZATION; TRANSISTORS;

FERROELECTRIC DEVICES;

EID: 14744293959     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490441197     Document Type: Article

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