Memory effects of pentacene MFS-FET

Synthetic Metals

Volumn 137, Issue 1-3, 2003, Pages 943-944

  Kodzasa, T ^a   Yoshida, M ^a   Uemura, S ^a   Kamata, T ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Metal oxide semiconductor (MOS) structure; Organic semiconductor; Semiconductor insulator interface; Sol gel method

Indexed keywords

FERROELECTRIC MATERIALS; HYSTERESIS; INTERFACES (MATERIALS); MORPHOLOGY; MOS DEVICES; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; SOL-GELS; THIN FILMS;

MEMORY EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 0037419039     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(02)01193-1     Document Type: Conference Paper

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