Bias effect on the luminescent properties of rectangular and trapezoidal quantum-well structures

Applied Physics Letters

Volumn 82, Issue 4, 2003, Pages 625-626

  Cheong, M G ^a,b   Choi, R J ^b   Suh, E K ^b   Lee, H J ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT EMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER LOCALIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037468077     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1536263     Document Type: Article

References (6)

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2. M. G. Cheong, H. S. Yoon, R. J. Choi, C. S. Kim, C.-H. Hong, E.-K. Suh, and H. J. Lee, J. Appl. Phys. 90, 5642 (2001).
3. M. G. Cheong, E.-K. Suh, H. J. Lee, and M. Dawson, Semicond. Sci. Technol. 17, 446 (2002).
4. H. K. Cho, J. Y. Lee, C. S. Kim, and G. M. Yang, J. Appl. Phys. 91, 1166 (2002).
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6. W. Y. Kim, E.-K. Suh, and H. J. Lee, Appl. Phys. Lett. 80, 3949 (2002).