III-nitride power devices - good results and great expectations

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 807-814

  Shur, Michael ^a   Gaska, Remis ^b   Khan, Asif ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b SET Incorporated   (United States)

^c UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); MICROWAVE DEVICES; MOSFET DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; STRAIN;

HETEROINTERFACE; NITRIDE POWER DEVICES; STRAIN ENERGY BAND ENGINEERING;

GALLIUM NITRIDE;

EID: 14344275374     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.807     Document Type: Article

References (19)

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