Impact ionisation in AlGaN-GaN heterostructure field effect transistors on sapphire substrates

Electronics Letters

Volumn 34, Issue 17, 1998, Pages 1699-1700

  Dyakonova, N ^a,c   Dickens, A ^a   Shur, M S ^a   Gaska, R ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b APA Optronics   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; HETEROJUNCTIONS; IONIZATION OF SOLIDS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

IMPACT IONIZATION;

FIELD EFFECT TRANSISTORS;

EID: 0032139629     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981174     Document Type: Article

References (12)

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